TCST5123 Datasheet | Vishay

Description These devices have a pact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the gap is equal to a package height of 4 mm. Applications D Position sensor for shaft encoder, D Detection of opaque material such as paper, IBM cards, magnetic tapes etc., 96 12253 D Limit switch for mechanical motions in VCR, D General purpose - wherever the space is limited Features D Gap 2.8 mm D Package height: TCST5123: 4.0 mm D Plastic polycarbonate housing D Subminiature construction D Snap-in mounting mechanisms D Current Transfer Ratio (CTR) of typical 20% 96 11968 Top view Order Instruction Ordering Code TCST5123 Resolution (mm) / Aperture (mm) 0.6 / non Remarks Snap-in construction Document Number 83766 Rev. A3, 08- Jun- 99 .vishay. 1 (7) Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 3 100 100 Unit V m A A m W °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 70 7 100 150 100 Unit V V m A m W °C Tamb ≤ 25°C Coupler Parameter Total power dissipation Operation temperature range Storage temperature range Soldering temperature Test Conditions Tamb ≤ 25°C Symbol Ptot Tamb Tstg Tsd Value 250 - 25 to +85 - 55 to +100 260 Unit m W °C °C °C t ≤ 3 s distance 1.5 mm from case Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 60 m A VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V p F Output (Detector) Parameter Collector emitter voltage Emitter collector...